SI2333CDS features ? trenchfet ? power mosfet applications ? load switch ? pa switch mosfet product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ.) - 12 0.035 at v gs = - 4.5 v - 5.1 9 nc 0.045 at v gs = - 2.5 v - 4.5 0.059 at v gs = - 1.8 v - 3.9 g to-236 (sot-23) s d top v ie w 2 3 1 SI2333CDS (o3)* * marking code orderin g information: SI2333CDS-t1-e3 (lead (p b )-free) notes: a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. maximum under steady state conditions is 166 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 12 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) t c = 25 c i d - 7.1 a t c = 70 c - 5.7 t a = 25 c - 5.1 b, c t a = 70 c - 4.0 b, c pulsed drain current i dm - 20 continuous source-drain diode current t c = 25 c i s - 1.0 t a = 25 c - 0.63 b, c maximum power dissipation t c = 25 c p d 2.5 w t c = 70 c 1.6 t a = 25 c 1.25 b, c t a = 70 c 0.8 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d 5 s r thja 75 100 c/w maximum junction-to-foot (drain) steady state r thjf 40 50 rohs compliant product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subject to production testing. mosfet specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v ds = 0 v, i d = - 250 a - 12 v v ds temperature coefficient v ds /t j i d = - 250 a - 13 mv/c v gs(th) temperature coefficient v gs(th) /t j 2.6 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.4 - 1 v gate-source leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = - 12 v, v gs = 0 v - 1 a v ds = - 12 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds - 5 v, v gs = - 4.5 v - 20 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 5.1 a 0.0285 0.035 v gs = - 2.5 v, i d = - 4.5 a 0.036 0.045 v gs = - 1.8 v, i d = - 2.0 a 0.046 0.059 forward transconductance a g fs v ds = - 5 v, i d = - 1.9 a 1.6 s dynamic b input capacitance c iss v ds = - 6 v, v gs = 0 v, f = 1 mhz 1225 pf output capacitance c oss 315 reverse transfer capacitance c rss 260 total gate charge q g v ds = - 6 v, v gs = - 4.5 v, i d = - 5.1 a 15 25 nc v ds = - 6 v, v gs = - 2.5 v, i d = - 5.1 a 915 gate-source charge q gs 1.9 gate-drain charge q gd 3.8 gate resistance r g f = 1 mhz 4.0 tu r n - o n d e l ay t i m e t d(on) v dd = - 6 v, r l = 6 i d = - 1 a, v gen = - 4.5 v, r g = 1 13 20 ns rise time t r 35 60 turn-off delay time t d(off) 45 70 fall time t f 12 20 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 1.0 a pulse diode forward current a i sm - 20 body diode voltage v sd i s = - 1.0 a - 0.7 - 1.2 v body diode reverse recovery time t rr i f = - 1.0 a, di/dt = 100 a/s, t j = 25 c 32 50 ns body diode reverse recovery charge q rr 20 40 nc reverse recovery fall time t a 16 ns reverse recovery rise time t b 16 SI2333CDS product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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